Abstract
We report an experimental and first-principles study of the thermal decomposition of 6H-SiC wafers, yielding graphite on the Si-terminated face and carbon nanotubes on the C-terminated face. The asymmetry of the carbon structure formation mechanisms is rationalized in terms of the different termination geometries of the opposite SIC faces. First-principles modeling reveals that horizontal, pi-delocalized carbon structures form on the Si-terminated face. The bonding network geometry of the C-terminated face favors instead the formation of vertically oriented carbon structures, which can be interpreted as nanotube lateral wall precursors.
Original language | English |
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Pages (from-to) | 4335 - 4341 |
Number of pages | 7 |
Journal | Nano Letters |
Volume | 8 |
Issue number | 12 |
DOIs | |
Publication status | Published - Dec 2008 |