Abstract
The structural and electronic properties of low index (100) and (111) ZrO2-CeO2 interfaces are analyzed on the basis of density functional theory calculations. The formation energy and relative stability of substitutional defects, oxygen vacancies, and vacancy-dopant complexes are investigated for the (100) orientation. By comparing these results with the ones obtained in bulk structures, we provide a possible explanation for the higher experimental ionic conductivity measured at the interface.
Original language | English |
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Article number | 085407 |
Pages (from-to) | - |
Number of pages | 5 |
Journal | Physical Review B (Condensed Matter and Materials Physics) |
Volume | 86 |
Issue number | 8 |
DOIs | |
Publication status | Published - 3 Aug 2012 |