Abstract
A systematic study of the isothermal annealing effect on the thermal destruction of the G centre was carried out at various annealing temperatures between 180 degrees C and 240 degrees C for e(-)-irradiated EFG Si samples with various radiation doses between 5 x 10(16) and 8 x 10(17) cm(-2). We show that the thermal decay of the concentration of the G centre (monitored by the 969 meV 'G' zero-phonon line absorption) can be explained by the combination of two independent processes through the break-up of the G centres and the capture of migrating defects. By analysing the rates of changes of [G], [C-i] (interstitial carbon atoms), and [T] (migrating defects), the two exponential decay behaviour of the G centres during annealing was modelled successfully. With this decay model, it was shown that the time constant of the slow decay process has the temperature dependence with the two exponential factors of the break-up energy of the G centre (1.934 eV) and the migration energy of carbon atom (0.890 eV). For the fast decay process, the temperature dependence of the time constant was fitted with a single exponential curve and the migration energy of the defect was obtained as E-m(d) = 0.879 eV. (C) 1999 Elsevier Science B.V. All rights reserved.
| Original language | English |
|---|---|
| Pages (from-to) | 283 - 286 |
| Number of pages | 4 |
| Journal | PHYSICA B |
| Volume | 274 |
| Publication status | Published - 15 Dec 1999 |
| Event | 20th International Conference on Defects in Semiconductors (ICDS-20) - BERKELEY, CALIFORNIA Duration: 1 Jan 1999 → … |