Carbon-related centres in irradiated SiGe alloys

S Hayama; G Davies; J Tan; V P Markevich; A R Peaker; J Evans-Freeman; K D Vernon-Parry; N V Abrosimov

Carbon-related centres in irradiated SiGe alloys

S Hayama, G Davies, J Tan, V P Markevich, A R Peaker, J Evans-Freeman, K D Vernon-Parry, N V Abrosimov

Research output: Contribution to journal › Conference paper

8 Citations (Scopus)

Abstract

We report measurements on the C-i-O-i 'C-centre' in Czochralski-grown Si1-xGex (xless than or equal to0.06), using the complementary techniques of photoluminescence (PL) and deep-level transient spectroscopy (DLTS). Both techniques show that the donor level of the C-centre in SiGe alloys shifts towards the valence band with increasing x. Unexpectedly, the shift rate of d(DeltaH(n))/dx = +550 meV detected using DLTS is found to be 1.6 times greater than that from PL measurements. Alloy broadening of the PL line and the DLTS signal are similar, and suggest that the C-centre is preferentially found in a Ge-rich environment. (C) 2003 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	823 - 826
Number of pages	4
Journal	PHYSICA B
Volume	340
Publication status	Published - 31 Dec 2003
Event	22nd International Conference on Defects in Semiconductors (ICDS-22) - AARHUS, Denmark Duration: 1 Jan 2003 → …

Cite this

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title = "Carbon-related centres in irradiated SiGe alloys",

abstract = "We report measurements on the C-i-O-i 'C-centre' in Czochralski-grown Si1-xGex (xless than or equal to0.06), using the complementary techniques of photoluminescence (PL) and deep-level transient spectroscopy (DLTS). Both techniques show that the donor level of the C-centre in SiGe alloys shifts towards the valence band with increasing x. Unexpectedly, the shift rate of d(DeltaH(n))/dx = +550 meV detected using DLTS is found to be 1.6 times greater than that from PL measurements. Alloy broadening of the PL line and the DLTS signal are similar, and suggest that the C-centre is preferentially found in a Ge-rich environment. (C) 2003 Elsevier B.V. All rights reserved.",

author = "S Hayama and G Davies and J Tan and Markevich, {V P} and Peaker, {A R} and J Evans-Freeman and Vernon-Parry, {K D} and Abrosimov, {N V}",

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language = "English",

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TY - JOUR

T1 - Carbon-related centres in irradiated SiGe alloys

AU - Hayama, S

AU - Davies, G

AU - Tan, J

AU - Markevich, V P

AU - Peaker, A R

AU - Evans-Freeman, J

AU - Vernon-Parry, K D

AU - Abrosimov, N V

PY - 2003/12/31

Y1 - 2003/12/31

N2 - We report measurements on the C-i-O-i 'C-centre' in Czochralski-grown Si1-xGex (xless than or equal to0.06), using the complementary techniques of photoluminescence (PL) and deep-level transient spectroscopy (DLTS). Both techniques show that the donor level of the C-centre in SiGe alloys shifts towards the valence band with increasing x. Unexpectedly, the shift rate of d(DeltaH(n))/dx = +550 meV detected using DLTS is found to be 1.6 times greater than that from PL measurements. Alloy broadening of the PL line and the DLTS signal are similar, and suggest that the C-centre is preferentially found in a Ge-rich environment. (C) 2003 Elsevier B.V. All rights reserved.

AB - We report measurements on the C-i-O-i 'C-centre' in Czochralski-grown Si1-xGex (xless than or equal to0.06), using the complementary techniques of photoluminescence (PL) and deep-level transient spectroscopy (DLTS). Both techniques show that the donor level of the C-centre in SiGe alloys shifts towards the valence band with increasing x. Unexpectedly, the shift rate of d(DeltaH(n))/dx = +550 meV detected using DLTS is found to be 1.6 times greater than that from PL measurements. Alloy broadening of the PL line and the DLTS signal are similar, and suggest that the C-centre is preferentially found in a Ge-rich environment. (C) 2003 Elsevier B.V. All rights reserved.

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M3 - Conference paper

VL - 340

SP - 823

EP - 826

JO - PHYSICA B

JF - PHYSICA B

T2 - 22nd International Conference on Defects in Semiconductors (ICDS-22)

Y2 - 1 January 2003

ER -

Carbon-related centres in irradiated SiGe alloys

Abstract

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