Developments for radiation hard silicon detectors by defect engineering - results by the CERN RD48 (ROSE) Collaboration

Collaboration; M Ahmed; S Albergo; P Allport; D Anderson; L Andricek; M M Angarano; V Augelli; N Bacchetta; P Bartalini; R Bates; U Biggeri; G M Bilei; D Bisello; D Boemi; E Borchi; T Botila; T J Brodbeck; M Bruzzi; T Budzynski; P Burger; F Campabadal; G Casse; E Catacchini; A Chilingarov; P Ciampolini; V Cindro; M J Costa; D Creanza; P Clauws; C Da Via; G Davies; W De Boer; R Dell'Orso; M De Palma; B Dezillie; V Eremin; O Evrard; G Fallica; G Fanourakis; H Feick; E Focardi; L Fonseca; E Fretwurst; J Fuster; K Gabathuler; M Glaser; P Grabiec; E Grigoriev; G Hall; M Hanlon

Developments for radiation hard silicon detectors by defect engineering - results by the CERN RD48 (ROSE) Collaboration

Collaboration, M Ahmed, S Albergo, P Allport, D Anderson, L Andricek, M M Angarano, V Augelli, N Bacchetta, P Bartalini, R Bates, U Biggeri, G M Bilei, D Bisello, D Boemi, E Borchi, T Botila, T J Brodbeck, M Bruzzi, T BudzynskiP Burger, F Campabadal, G Casse, E Catacchini, A Chilingarov, P Ciampolini, V Cindro, M J Costa, D Creanza, P Clauws, C Da Via, G Davies, W De Boer, R Dell'Orso, M De Palma, B Dezillie, V Eremin, O Evrard, G Fallica, G Fanourakis, H Feick, E Focardi, L Fonseca, E Fretwurst, J Fuster, K Gabathuler, M Glaser, P Grabiec, E Grigoriev, G Hall, M Hanlon

Research output: Contribution to journal › Conference paper

100 Citations (Scopus)

Abstract

This report summarises the final results obtained by the RD48 collaboration. The emphasis is on the more practical aspects directly relevant for LHC applications. The report is based on the comprehensive survey given in the 1999 status report (RD48 3rd Status Report, CERN/LHCC 2000-009, December 1999), a recent conference report (Lindstrom et al, (RD48), and some latest experimental results. Additional data have been reported in the last ROSE workshop (5th ROSE workshop, CERN, CERN/LEB 2000-005), A compilation of all RD48 internal reports and a full publication list can be found on the RD48 homepage (http://cern.ch/RD48/). The success of the oxygen enrichment of FZ-silicon as a highly powerful defect engineering technique and its optimisation with various commercial manufacturers are reported. The focus is on the changes of the effective doping concentration (depletion voltage). The RD48 model for the dependence of radiation effects on fluence, temperature and operational time is verified: projections to operational scenarios for main LHC experiments demonstrate vital benefits. Progress in the microscopic understanding of damage effects as well as the application of defect kinetics models and device modelling for the prediction of the macroscopic behaviour was also been achieved but will not be covered in detail. (C) 2001 Elsevier Science B.V. All rights reserved.

Original language	English
Pages (from-to)	60 - 69
Number of pages	10
Journal	Nuclear Instruments & Methods In Physics Research Section A, Accelerators, Spectrometers, Detectors And Associated Equipment
Volume	465
Issue number	1
Publication status	Published - 1 Jun 2001
Event	International Workshop on Semiconductor Pixel Detectors for Particles and X-rays - GENOA, Italy Duration: 1 Jan 2001 → …

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Collaboration, Ahmed, M., Albergo, S., Allport, P., Anderson, D., Andricek, L., Angarano, M. M., Augelli, V., Bacchetta, N., Bartalini, P., Bates, R., Biggeri, U., Bilei, G. M., Bisello, D., Boemi, D., Borchi, E., Botila, T., Brodbeck, T. J., Bruzzi, M., ... Hanlon, M. (2001). Developments for radiation hard silicon detectors by defect engineering - results by the CERN RD48 (ROSE) Collaboration. Nuclear Instruments & Methods In Physics Research Section A, Accelerators, Spectrometers, Detectors And Associated Equipment, 465(1), 60 - 69.

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title = "Developments for radiation hard silicon detectors by defect engineering - results by the CERN RD48 (ROSE) Collaboration",

abstract = "This report summarises the final results obtained by the RD48 collaboration. The emphasis is on the more practical aspects directly relevant for LHC applications. The report is based on the comprehensive survey given in the 1999 status report (RD48 3rd Status Report, CERN/LHCC 2000-009, December 1999), a recent conference report (Lindstrom et al, (RD48), and some latest experimental results. Additional data have been reported in the last ROSE workshop (5th ROSE workshop, CERN, CERN/LEB 2000-005), A compilation of all RD48 internal reports and a full publication list can be found on the RD48 homepage (http://cern.ch/RD48/). The success of the oxygen enrichment of FZ-silicon as a highly powerful defect engineering technique and its optimisation with various commercial manufacturers are reported. The focus is on the changes of the effective doping concentration (depletion voltage). The RD48 model for the dependence of radiation effects on fluence, temperature and operational time is verified: projections to operational scenarios for main LHC experiments demonstrate vital benefits. Progress in the microscopic understanding of damage effects as well as the application of defect kinetics models and device modelling for the prediction of the macroscopic behaviour was also been achieved but will not be covered in detail. (C) 2001 Elsevier Science B.V. All rights reserved.",

author = "Collaboration and M Ahmed and S Albergo and P Allport and D Anderson and L Andricek and Angarano, {M M} and V Augelli and N Bacchetta and P Bartalini and R Bates and U Biggeri and Bilei, {G M} and D Bisello and D Boemi and E Borchi and T Botila and Brodbeck, {T J} and M Bruzzi and T Budzynski and P Burger and F Campabadal and G Casse and E Catacchini and A Chilingarov and P Ciampolini and V Cindro and Costa, {M J} and D Creanza and P Clauws and {Da Via}, C and G Davies and {De Boer}, W and R Dell'Orso and {De Palma}, M and B Dezillie and V Eremin and O Evrard and G Fallica and G Fanourakis and H Feick and E Focardi and L Fonseca and E Fretwurst and J Fuster and K Gabathuler and M Glaser and P Grabiec and E Grigoriev and G Hall and M Hanlon",

year = "2001",

month = jun,

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language = "English",

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pages = "60 -- 69",

journal = "Nuclear Instruments & Methods In Physics Research Section A, Accelerators, Spectrometers, Detectors And Associated Equipment",

issn = "1872-9576",

publisher = "Elsevier",

number = "1",

note = "International Workshop on Semiconductor Pixel Detectors for Particles and X-rays ; Conference date: 01-01-2001",

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Collaboration, Ahmed, M, Albergo, S, Allport, P, Anderson, D, Andricek, L, Angarano, MM, Augelli, V, Bacchetta, N, Bartalini, P, Bates, R, Biggeri, U, Bilei, GM, Bisello, D, Boemi, D, Borchi, E, Botila, T, Brodbeck, TJ, Bruzzi, M, Budzynski, T, Burger, P, Campabadal, F, Casse, G, Catacchini, E, Chilingarov, A, Ciampolini, P, Cindro, V, Costa, MJ, Creanza, D, Clauws, P, Da Via, C, Davies, G, De Boer, W, Dell'Orso, R, De Palma, M, Dezillie, B, Eremin, V, Evrard, O, Fallica, G, Fanourakis, G, Feick, H, Focardi, E, Fonseca, L, Fretwurst, E, Fuster, J, Gabathuler, K, Glaser, M, Grabiec, P, Grigoriev, E, Hall, G & Hanlon, M 2001, 'Developments for radiation hard silicon detectors by defect engineering - results by the CERN RD48 (ROSE) Collaboration', Nuclear Instruments & Methods In Physics Research Section A, Accelerators, Spectrometers, Detectors And Associated Equipment, vol. 465, no. 1, pp. 60 - 69.

Developments for radiation hard silicon detectors by defect engineering - results by the CERN RD48 (ROSE) Collaboration. / Collaboration; Ahmed, M; Albergo, S et al.
In: Nuclear Instruments & Methods In Physics Research Section A, Accelerators, Spectrometers, Detectors And Associated Equipment, Vol. 465, No. 1, 01.06.2001, p. 60 - 69.

Research output: Contribution to journal › Conference paper

TY - JOUR

T1 - Developments for radiation hard silicon detectors by defect engineering - results by the CERN RD48 (ROSE) Collaboration

AU - Collaboration

AU - Ahmed, M

AU - Albergo, S

AU - Allport, P

AU - Anderson, D

AU - Andricek, L

AU - Angarano, M M

AU - Augelli, V

AU - Bacchetta, N

AU - Bartalini, P

AU - Bates, R

AU - Biggeri, U

AU - Bilei, G M

AU - Bisello, D

AU - Boemi, D

AU - Borchi, E

AU - Botila, T

AU - Brodbeck, T J

AU - Bruzzi, M

AU - Budzynski, T

AU - Burger, P

AU - Campabadal, F

AU - Casse, G

AU - Catacchini, E

AU - Chilingarov, A

AU - Ciampolini, P

AU - Cindro, V

AU - Costa, M J

AU - Creanza, D

AU - Clauws, P

AU - Da Via, C

AU - Davies, G

AU - De Boer, W

AU - Dell'Orso, R

AU - De Palma, M

AU - Dezillie, B

AU - Eremin, V

AU - Evrard, O

AU - Fallica, G

AU - Fanourakis, G

AU - Feick, H

AU - Focardi, E

AU - Fonseca, L

AU - Fretwurst, E

AU - Fuster, J

AU - Gabathuler, K

AU - Glaser, M

AU - Grabiec, P

AU - Grigoriev, E

AU - Hall, G

AU - Hanlon, M

PY - 2001/6/1

Y1 - 2001/6/1

N2 - This report summarises the final results obtained by the RD48 collaboration. The emphasis is on the more practical aspects directly relevant for LHC applications. The report is based on the comprehensive survey given in the 1999 status report (RD48 3rd Status Report, CERN/LHCC 2000-009, December 1999), a recent conference report (Lindstrom et al, (RD48), and some latest experimental results. Additional data have been reported in the last ROSE workshop (5th ROSE workshop, CERN, CERN/LEB 2000-005), A compilation of all RD48 internal reports and a full publication list can be found on the RD48 homepage (http://cern.ch/RD48/). The success of the oxygen enrichment of FZ-silicon as a highly powerful defect engineering technique and its optimisation with various commercial manufacturers are reported. The focus is on the changes of the effective doping concentration (depletion voltage). The RD48 model for the dependence of radiation effects on fluence, temperature and operational time is verified: projections to operational scenarios for main LHC experiments demonstrate vital benefits. Progress in the microscopic understanding of damage effects as well as the application of defect kinetics models and device modelling for the prediction of the macroscopic behaviour was also been achieved but will not be covered in detail. (C) 2001 Elsevier Science B.V. All rights reserved.

AB - This report summarises the final results obtained by the RD48 collaboration. The emphasis is on the more practical aspects directly relevant for LHC applications. The report is based on the comprehensive survey given in the 1999 status report (RD48 3rd Status Report, CERN/LHCC 2000-009, December 1999), a recent conference report (Lindstrom et al, (RD48), and some latest experimental results. Additional data have been reported in the last ROSE workshop (5th ROSE workshop, CERN, CERN/LEB 2000-005), A compilation of all RD48 internal reports and a full publication list can be found on the RD48 homepage (http://cern.ch/RD48/). The success of the oxygen enrichment of FZ-silicon as a highly powerful defect engineering technique and its optimisation with various commercial manufacturers are reported. The focus is on the changes of the effective doping concentration (depletion voltage). The RD48 model for the dependence of radiation effects on fluence, temperature and operational time is verified: projections to operational scenarios for main LHC experiments demonstrate vital benefits. Progress in the microscopic understanding of damage effects as well as the application of defect kinetics models and device modelling for the prediction of the macroscopic behaviour was also been achieved but will not be covered in detail. (C) 2001 Elsevier Science B.V. All rights reserved.

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M3 - Conference paper

SN - 1872-9576

VL - 465

SP - 60

EP - 69

JO - Nuclear Instruments & Methods In Physics Research Section A, Accelerators, Spectrometers, Detectors And Associated Equipment

JF - Nuclear Instruments & Methods In Physics Research Section A, Accelerators, Spectrometers, Detectors And Associated Equipment

IS - 1

T2 - International Workshop on Semiconductor Pixel Detectors for Particles and X-rays

Y2 - 1 January 2001

ER -

Developments for radiation hard silicon detectors by defect engineering - results by the CERN RD48 (ROSE) Collaboration

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