Evolution of radiation-induced carbon-oxygen-related defects in silicon upon annealing: LVM studies

L I Murin; J L Lindstrom; G Davies; V P Markevich

doi:10.1016/j.nimb.2006.10.029

Evolution of radiation-induced carbon-oxygen-related defects in silicon upon annealing: LVM studies

L I Murin, J L Lindstrom, G Davies, V P Markevich

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33 Citations (Scopus)

Abstract

The evolution of carbon-oxygen-related defects upon isochronal annealing (75-325 degrees C in 25 degrees C steps for 30 min at each temperature) in electron irradiated Si crystals has been studied by means of local vibrational mode (LVM) spectroscopy. A complicated annealing behaviour of the LVMs related to the C4 (ICiOi) defect has been observed. At about 200 degrees C the bands at 940 and 1024 cm(-1) are transformed into three new LVM bands at 724 cm(-1) (O-related) and at 952 and 973 cm(-1) (both C-related). Further increase in annealing temperature up to 250-275 degrees C results in a transformation of the latter bands into a new set of LVM bands at 969 cm(-1) (O-related) and at 951 and 977 cm(-1) (both C-related). These bands disappear at about 300-325 C. It is suggested that all the above-mentioned LVMs arise from the C4 defect being in different configurations. (c) 2006 Elsevier B.V. All rights reserved

Original language	English
Pages (from-to)	210 - 213
Number of pages	4
Journal	Nuclear Instruments & Methods In Physics Research Section B, Beam Interactions With Materials And Atoms
Volume	253
Issue number	1-2
DOIs	https://doi.org/10.1016/j.nimb.2006.10.029
Publication status	Published - Dec 2006

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title = "Evolution of radiation-induced carbon-oxygen-related defects in silicon upon annealing: LVM studies",

abstract = "The evolution of carbon-oxygen-related defects upon isochronal annealing (75-325 degrees C in 25 degrees C steps for 30 min at each temperature) in electron irradiated Si crystals has been studied by means of local vibrational mode (LVM) spectroscopy. A complicated annealing behaviour of the LVMs related to the C4 (ICiOi) defect has been observed. At about 200 degrees C the bands at 940 and 1024 cm(-1) are transformed into three new LVM bands at 724 cm(-1) (O-related) and at 952 and 973 cm(-1) (both C-related). Further increase in annealing temperature up to 250-275 degrees C results in a transformation of the latter bands into a new set of LVM bands at 969 cm(-1) (O-related) and at 951 and 977 cm(-1) (both C-related). These bands disappear at about 300-325 C. It is suggested that all the above-mentioned LVMs arise from the C4 defect being in different configurations. (c) 2006 Elsevier B.V. All rights reserved",

author = "Murin, {L I} and Lindstrom, {J L} and G Davies and Markevich, {V P}",

year = "2006",

month = dec,

doi = "10.1016/j.nimb.2006.10.029",

language = "English",

volume = "253",

pages = "210 -- 213",

journal = "Nuclear Instruments & Methods In Physics Research Section B, Beam Interactions With Materials And Atoms",

issn = "1872-9584",

publisher = "Elsevier",

number = "1-2",

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TY - JOUR

T1 - Evolution of radiation-induced carbon-oxygen-related defects in silicon upon annealing: LVM studies

AU - Murin, L I

AU - Lindstrom, J L

AU - Davies, G

AU - Markevich, V P

PY - 2006/12

Y1 - 2006/12

N2 - The evolution of carbon-oxygen-related defects upon isochronal annealing (75-325 degrees C in 25 degrees C steps for 30 min at each temperature) in electron irradiated Si crystals has been studied by means of local vibrational mode (LVM) spectroscopy. A complicated annealing behaviour of the LVMs related to the C4 (ICiOi) defect has been observed. At about 200 degrees C the bands at 940 and 1024 cm(-1) are transformed into three new LVM bands at 724 cm(-1) (O-related) and at 952 and 973 cm(-1) (both C-related). Further increase in annealing temperature up to 250-275 degrees C results in a transformation of the latter bands into a new set of LVM bands at 969 cm(-1) (O-related) and at 951 and 977 cm(-1) (both C-related). These bands disappear at about 300-325 C. It is suggested that all the above-mentioned LVMs arise from the C4 defect being in different configurations. (c) 2006 Elsevier B.V. All rights reserved

AB - The evolution of carbon-oxygen-related defects upon isochronal annealing (75-325 degrees C in 25 degrees C steps for 30 min at each temperature) in electron irradiated Si crystals has been studied by means of local vibrational mode (LVM) spectroscopy. A complicated annealing behaviour of the LVMs related to the C4 (ICiOi) defect has been observed. At about 200 degrees C the bands at 940 and 1024 cm(-1) are transformed into three new LVM bands at 724 cm(-1) (O-related) and at 952 and 973 cm(-1) (both C-related). Further increase in annealing temperature up to 250-275 degrees C results in a transformation of the latter bands into a new set of LVM bands at 969 cm(-1) (O-related) and at 951 and 977 cm(-1) (both C-related). These bands disappear at about 300-325 C. It is suggested that all the above-mentioned LVMs arise from the C4 defect being in different configurations. (c) 2006 Elsevier B.V. All rights reserved

U2 - 10.1016/j.nimb.2006.10.029

DO - 10.1016/j.nimb.2006.10.029

M3 - Article

SN - 1872-9584

VL - 253

SP - 210

EP - 213

JO - Nuclear Instruments & Methods In Physics Research Section B, Beam Interactions With Materials And Atoms

JF - Nuclear Instruments & Methods In Physics Research Section B, Beam Interactions With Materials And Atoms

IS - 1-2

ER -

Evolution of radiation-induced carbon-oxygen-related defects in silicon upon annealing: LVM studies

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