Evolution of W optical center in Si-implanted epitaxial SiGe at low temperature annealing

The authors have investigated the effect of Ge concentration on the evolution of W optical center (W center) in Si-implanted epitaxial Si1-xGex at low temperature annealing. From the results of photoluminescence, the annealing behavior of W center can be separated into two regimes, i.e., W centers in Si1-xGex alloy with Ge <5% are stable, otherwise not stable. The annealing behavior of W center is similar to {311} defect in Si1-xGex. It is suggested that the dissipation of excess interstitials by outdiffusion at low temperature is one of the candidate mechanisms for the retardation of transient enhanced diffusion of boron in Si1-xGex. (c) 2007 American Institute of Physics