Isotope effects and temperature-dependence studies on vibrational lifetimes of interstitial oxygen in silicon

K K Kohli; G Davies; N Q Vinh; D West; S K Estreicher; T Gregorkiewicz; I Izeddin; K M Itoh

doi:10.1016/j.nimb.2006.10.055

Isotope effects and temperature-dependence studies on vibrational lifetimes of interstitial oxygen in silicon

K K Kohli, G Davies, N Q Vinh, D West, S K Estreicher, T Gregorkiewicz, I Izeddin, K M Itoh

Research output: Contribution to journal › Article › peer-review

Abstract

Vibrational lifetimes of the asymmetric stretch mode (1136 cm(-1)) of oxygen in silicon are measured using pump-probe spectroscopy and calculated by ab initio theory. We find that increasing the isotope of the nearest-neighbouring silicon atom increases the lifetime of the vibration. This isotope-dependence establishes the participation of the v(1) (613 cm(-1)) local vibrational mode in the decay of the v(3) (1136 cm(-1)) mode. Temperature-dependence measurements show the low-energy v(2) (29 cm(-1)) mode governs the repopulation rates for the ground state. We also analyze the temperature-dependence of transitions of excited states of the v(2) vibration. (c) 2006 Elsevier B.V. All rights reserved

Original language	English
Pages (from-to)	200 - 204
Number of pages	5
Journal	Nuclear Instruments & Methods In Physics Research Section B, Beam Interactions With Materials And Atoms
Volume	253
Issue number	1-2
DOIs	https://doi.org/10.1016/j.nimb.2006.10.055
Publication status	Published - Dec 2006

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Kohli, K. K., Davies, G., Vinh, N. Q., West, D., Estreicher, S. K., Gregorkiewicz, T., Izeddin, I., & Itoh, K. M. (2006). Isotope effects and temperature-dependence studies on vibrational lifetimes of interstitial oxygen in silicon. Nuclear Instruments & Methods In Physics Research Section B, Beam Interactions With Materials And Atoms, 253(1-2), 200 - 204. https://doi.org/10.1016/j.nimb.2006.10.055

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title = "Isotope effects and temperature-dependence studies on vibrational lifetimes of interstitial oxygen in silicon",

abstract = "Vibrational lifetimes of the asymmetric stretch mode (1136 cm(-1)) of oxygen in silicon are measured using pump-probe spectroscopy and calculated by ab initio theory. We find that increasing the isotope of the nearest-neighbouring silicon atom increases the lifetime of the vibration. This isotope-dependence establishes the participation of the v(1) (613 cm(-1)) local vibrational mode in the decay of the v(3) (1136 cm(-1)) mode. Temperature-dependence measurements show the low-energy v(2) (29 cm(-1)) mode governs the repopulation rates for the ground state. We also analyze the temperature-dependence of transitions of excited states of the v(2) vibration. (c) 2006 Elsevier B.V. All rights reserved",

author = "Kohli, {K K} and G Davies and Vinh, {N Q} and D West and Estreicher, {S K} and T Gregorkiewicz and I Izeddin and Itoh, {K M}",

year = "2006",

month = dec,

doi = "10.1016/j.nimb.2006.10.055",

language = "English",

volume = "253",

pages = "200 -- 204",

journal = "Nuclear Instruments & Methods In Physics Research Section B, Beam Interactions With Materials And Atoms",

issn = "1872-9584",

publisher = "Elsevier",

number = "1-2",

}

Kohli, KK, Davies, G, Vinh, NQ, West, D, Estreicher, SK, Gregorkiewicz, T, Izeddin, I & Itoh, KM 2006, 'Isotope effects and temperature-dependence studies on vibrational lifetimes of interstitial oxygen in silicon', Nuclear Instruments & Methods In Physics Research Section B, Beam Interactions With Materials And Atoms, vol. 253, no. 1-2, pp. 200 - 204. https://doi.org/10.1016/j.nimb.2006.10.055

Isotope effects and temperature-dependence studies on vibrational lifetimes of interstitial oxygen in silicon. / Kohli, K K; Davies, G; Vinh, N Q et al.
In: Nuclear Instruments & Methods In Physics Research Section B, Beam Interactions With Materials And Atoms, Vol. 253, No. 1-2, 12.2006, p. 200 - 204.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Isotope effects and temperature-dependence studies on vibrational lifetimes of interstitial oxygen in silicon

AU - Kohli, K K

AU - Davies, G

AU - Vinh, N Q

AU - West, D

AU - Estreicher, S K

AU - Gregorkiewicz, T

AU - Izeddin, I

AU - Itoh, K M

PY - 2006/12

Y1 - 2006/12

N2 - Vibrational lifetimes of the asymmetric stretch mode (1136 cm(-1)) of oxygen in silicon are measured using pump-probe spectroscopy and calculated by ab initio theory. We find that increasing the isotope of the nearest-neighbouring silicon atom increases the lifetime of the vibration. This isotope-dependence establishes the participation of the v(1) (613 cm(-1)) local vibrational mode in the decay of the v(3) (1136 cm(-1)) mode. Temperature-dependence measurements show the low-energy v(2) (29 cm(-1)) mode governs the repopulation rates for the ground state. We also analyze the temperature-dependence of transitions of excited states of the v(2) vibration. (c) 2006 Elsevier B.V. All rights reserved

AB - Vibrational lifetimes of the asymmetric stretch mode (1136 cm(-1)) of oxygen in silicon are measured using pump-probe spectroscopy and calculated by ab initio theory. We find that increasing the isotope of the nearest-neighbouring silicon atom increases the lifetime of the vibration. This isotope-dependence establishes the participation of the v(1) (613 cm(-1)) local vibrational mode in the decay of the v(3) (1136 cm(-1)) mode. Temperature-dependence measurements show the low-energy v(2) (29 cm(-1)) mode governs the repopulation rates for the ground state. We also analyze the temperature-dependence of transitions of excited states of the v(2) vibration. (c) 2006 Elsevier B.V. All rights reserved

U2 - 10.1016/j.nimb.2006.10.055

DO - 10.1016/j.nimb.2006.10.055

M3 - Article

SN - 1872-9584

VL - 253

SP - 200

EP - 204

JO - Nuclear Instruments & Methods In Physics Research Section B, Beam Interactions With Materials And Atoms

JF - Nuclear Instruments & Methods In Physics Research Section B, Beam Interactions With Materials And Atoms

IS - 1-2

ER -

Isotope effects and temperature-dependence studies on vibrational lifetimes of interstitial oxygen in silicon

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