TY - JOUR
T1 - Near-field microscopy and lithography of light-emitting polymers
AU - Richards, D
AU - Cacialli, F
PY - 2004/4/15
Y1 - 2004/4/15
N2 - We describe the application of scanning near-field optical microscopy (SNOM) to the study of the photophysical and self-organization properties of thin films of blends of conjugated polymers, and also to the lateral nanoscale patterning of conjugated-polymer structures. Such thin-film plastic semiconductor nanostructures offer significant potential for use in opto-electronic devices. The implementation of SNOM we employ is the Most established form in which a probe with a sub-wavelength aperture is scanned in close proximity to the sample surface. We consider the nature of the near-field optical distribution, which decays within the first ca. 100 nm of these semiconductor materials, and address the identification of topographic artefacts in near-field optical images. While the topographic information obtained simultaneously with optical data in any SNOM experiment enables an easy comparison with the higher-resolution tapping-mode atomic force microscopy, the spectroscopic contrast provided by fluorescence SNOM gives an unambiguous chemical identification of the different phases in a conjugated-polymer blend. Both fluorescence and photoconductivity SNOM indicate that intermixing of constituent polymers in a blend, or nanoscale phase separation, is responsible for the high efficiency of devices employing these materials as their active layer. We, also demonstrate a scheme for nano-optical lithography with SNOM of conjugated-polymer structures, which has been employed successfully for the fabrication of poly(p-phenylene vinylene) nanostructures with 160 nm feature sizes.
AB - We describe the application of scanning near-field optical microscopy (SNOM) to the study of the photophysical and self-organization properties of thin films of blends of conjugated polymers, and also to the lateral nanoscale patterning of conjugated-polymer structures. Such thin-film plastic semiconductor nanostructures offer significant potential for use in opto-electronic devices. The implementation of SNOM we employ is the Most established form in which a probe with a sub-wavelength aperture is scanned in close proximity to the sample surface. We consider the nature of the near-field optical distribution, which decays within the first ca. 100 nm of these semiconductor materials, and address the identification of topographic artefacts in near-field optical images. While the topographic information obtained simultaneously with optical data in any SNOM experiment enables an easy comparison with the higher-resolution tapping-mode atomic force microscopy, the spectroscopic contrast provided by fluorescence SNOM gives an unambiguous chemical identification of the different phases in a conjugated-polymer blend. Both fluorescence and photoconductivity SNOM indicate that intermixing of constituent polymers in a blend, or nanoscale phase separation, is responsible for the high efficiency of devices employing these materials as their active layer. We, also demonstrate a scheme for nano-optical lithography with SNOM of conjugated-polymer structures, which has been employed successfully for the fabrication of poly(p-phenylene vinylene) nanostructures with 160 nm feature sizes.
UR - http://www.scopus.com/inward/record.url?scp=1842484847&partnerID=8YFLogxK
U2 - 10.1098/rsta.2003.1346
DO - 10.1098/rsta.2003.1346
M3 - Article
VL - 362
SP - 771
EP - 786
JO - PHILOSOPHICAL TRANSACTIONS- ROYAL SOCIETY OF LONDON SERIES A MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES
JF - PHILOSOPHICAL TRANSACTIONS- ROYAL SOCIETY OF LONDON SERIES A MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES
IS - 1817
ER -