Paraffin-enabled graphene transfer

Wei Sun Leong, Haozhe Wang, Jingjie Yeo, Francisco J. Martin-Martinez, Ahmad Zubair, Pin Chun Shen, Yunwei Mao, Tomas Palacios, Markus J. Buehler, Jin Yong Hong*, Jing Kong

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

221 Citations (Scopus)

Abstract

The performance and reliability of large-area graphene grown by chemical vapor deposition are often limited by the presence of wrinkles and the transfer-process-induced polymer residue. Here, we report a transfer approach using paraffin as a support layer, whose thermal properties, low chemical reactivity and non-covalent affinity to graphene enable transfer of wrinkle-reduced and clean large-area graphene. The paraffin-transferred graphene has smooth morphology and high electrical reliability with uniform sheet resistance with ~1% deviation over a centimeter-scale area. Electronic devices fabricated on such smooth graphene exhibit electrical performance approaching that of intrinsic graphene with small Dirac points and high carrier mobility (hole mobility = 14,215 cm 2 V −1 s −1 ; electron mobility = 7438 cm 2 V −1 s −1 ), without the need of further annealing treatment. The paraffin-enabled transfer process could open realms for the development of high-performance ubiquitous electronics based on large-area two-dimensional materials.

Original languageEnglish
Article number867
JournalNature Communications
Volume10
Issue number1
DOIs
Publication statusPublished - 1 Dec 2019

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