Recombination-enhanced diffusion of self-interstitial atoms and vacancy-interstitial recombination in diamond

M E Newton; B A Campbell; D J Twitchen; J M Baker; T R Anthony

Recombination-enhanced diffusion of self-interstitial atoms and vacancy-interstitial recombination in diamond

M E Newton, B A Campbell, D J Twitchen, J M Baker, T R Anthony

King's College London

Research output: Chapter in Book/Report/Conference proceeding › Conference paper

58 Citations (Scopus)

Abstract

We report the results of EPR and optical studies on vacancies and interstitials produced in type IIa diamond irradiated with 2-MeV electrons at temperatures between 90 and 900 K. Post-irradiation annealing studies at temperatures up to 1900 K were also performed. Data showing recombination-enhanced diffusion of self-interstitial atoms in diamond is presented and our analysis of the phenomena leads us to the conclusion that a highly mobile interstitial I* (possibly a charged/neutral T/sub d/ interstitial) is produced by electronic excitation and/or charge transfer. We estimate that the migration energy for I* is 0.3 eV No evidence for vacancy recombination-enhanced diffusion was observed. The experimental data confirms that there is a significant barrier to vacancy-interstitial recombination in diamond. (15 References).

Original language	English
Title of host publication	Unknown
Publisher	Unknown Publisher
Publication status	Published - 2002
Event	Elsevier. Diamond & Related Materials, vol.11, no.3-6, March-June 2002, pp.618-22. Netherlands. - Duration: 1 Jan 2002 → …

Conference

Conference	Elsevier. Diamond & Related Materials, vol.11, no.3-6, March-June 2002, pp.618-22. Netherlands.
Period	1/01/2002 → …

Cite this

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title = "Recombination-enhanced diffusion of self-interstitial atoms and vacancy-interstitial recombination in diamond",

abstract = "We report the results of EPR and optical studies on vacancies and interstitials produced in type IIa diamond irradiated with 2-MeV electrons at temperatures between 90 and 900 K. Post-irradiation annealing studies at temperatures up to 1900 K were also performed. Data showing recombination-enhanced diffusion of self-interstitial atoms in diamond is presented and our analysis of the phenomena leads us to the conclusion that a highly mobile interstitial I* (possibly a charged/neutral T/sub d/ interstitial) is produced by electronic excitation and/or charge transfer. We estimate that the migration energy for I* is 0.3 eV No evidence for vacancy recombination-enhanced diffusion was observed. The experimental data confirms that there is a significant barrier to vacancy-interstitial recombination in diamond. (15 References).",

author = "Newton, {M E} and Campbell, {B A} and Twitchen, {D J} and Baker, {J M} and Anthony, {T R}",

year = "2002",

language = "English",

booktitle = "Unknown",

publisher = "Unknown Publisher",

note = "Elsevier. Diamond & Related Materials, vol.11, no.3-6, March-June 2002, pp.618-22. Netherlands. ; Conference date: 01-01-2002",

}

TY - CHAP

T1 - Recombination-enhanced diffusion of self-interstitial atoms and vacancy-interstitial recombination in diamond

AU - Newton, M E

AU - Campbell, B A

AU - Twitchen, D J

AU - Baker, J M

AU - Anthony, T R

PY - 2002

Y1 - 2002

N2 - We report the results of EPR and optical studies on vacancies and interstitials produced in type IIa diamond irradiated with 2-MeV electrons at temperatures between 90 and 900 K. Post-irradiation annealing studies at temperatures up to 1900 K were also performed. Data showing recombination-enhanced diffusion of self-interstitial atoms in diamond is presented and our analysis of the phenomena leads us to the conclusion that a highly mobile interstitial I* (possibly a charged/neutral T/sub d/ interstitial) is produced by electronic excitation and/or charge transfer. We estimate that the migration energy for I* is 0.3 eV No evidence for vacancy recombination-enhanced diffusion was observed. The experimental data confirms that there is a significant barrier to vacancy-interstitial recombination in diamond. (15 References).

AB - We report the results of EPR and optical studies on vacancies and interstitials produced in type IIa diamond irradiated with 2-MeV electrons at temperatures between 90 and 900 K. Post-irradiation annealing studies at temperatures up to 1900 K were also performed. Data showing recombination-enhanced diffusion of self-interstitial atoms in diamond is presented and our analysis of the phenomena leads us to the conclusion that a highly mobile interstitial I* (possibly a charged/neutral T/sub d/ interstitial) is produced by electronic excitation and/or charge transfer. We estimate that the migration energy for I* is 0.3 eV No evidence for vacancy recombination-enhanced diffusion was observed. The experimental data confirms that there is a significant barrier to vacancy-interstitial recombination in diamond. (15 References).

UR - http://www.scopus.com/inward/record.url?scp=0036508107&partnerID=8YFLogxK

M3 - Conference paper

BT - Unknown

PB - Unknown Publisher

T2 - Elsevier. Diamond & Related Materials, vol.11, no.3-6, March-June 2002, pp.618-22. Netherlands.

Y2 - 1 January 2002

ER -

Recombination-enhanced diffusion of self-interstitial atoms and vacancy-interstitial recombination in diamond

Abstract

Conference

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