Abstract
At room temperature, the v(3) (1136 cm(-1)) absorption band of oxygen in silicon and Si1-xGex alloys consists of dozens of components, masking the properties of the individual transitions. Here, experimental data are presented for the evolution of the v(3) band in the temperature range 0 <T <300 K and the composition range 0
| Original language | English |
|---|---|
| Article number | 505801 |
| Journal | JOURNAL OF PHYSICS CONDENSED MATTER |
| Volume | 22 |
| Issue number | 50 |
| Publication status | Published - 2010 |